Improving the Interface Passivation of Si HJ Solar Cells by Interrupted Deposition of Thin a-Si:H Film
| Autor: | Ujjwal Das, Anishkumar Soman, S.S. Hegedus, Ugochukwu Nsofor |
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| Rok vydání: | 2018 |
| Předmět: |
Amorphous silicon
Materials science Passivation Hydrogen Silicon Open-circuit voltage Analytical chemistry chemistry.chemical_element 02 engineering and technology Carrier lifetime 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences chemistry.chemical_compound chemistry Deposition (phase transition) Fourier transform infrared spectroscopy 0210 nano-technology |
| Zdroj: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). |
| DOI: | 10.1109/pvsc.2018.8547458 |
| Popis: | In this paper, the effects of interrupted deposition of intrinsic hydrogenated amorphous silicon (i.a-Si:H) on the Si surface passivation are studied. Vibrational and optical properties of the i.a-Si:H films have been studied using Fourier transform infrared (FTIR) and Variable angle spectroscopic ellipsometry (VASE) respectively. The experiment confirms that the improved passivation from interrupted deposition arises from film densification and pinhole filling during the two-step deposition process. The i.a-Si:H films with interrupted deposition showed a higher fraction of low Si-H stretching mode vibration than the uninterrupted growth – an indication of compactness and densification, by incorporation of free hydrogen atoms into the i.a-Si:H network and resulting in improved implied open circuit voltage, iV OC >750mV with effective minority carrier lifetime, τeff > 5 ms. |
| Databáze: | OpenAIRE |
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