AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier for RF Applications

Autor:	Aniruddhan Gowrisankar, Sai Charan Vanjari, Abheek Bardhan, Anirudh Venugopalarao, Hareesh Chandrasekar, Rangarajan Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath
Rok vydání:	2022
Zdroj:	2022 IEEE International Conference on Emerging Electronics (ICEE).
DOI:	10.1109/icee56203.2022.10118188
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::abe9bec5c3a3179a9a4740b9cb42cdb6 https://doi.org/10.1109/icee56203.2022.10118188 Zobrazit plný text záznamu