A Study on Bandgap Reference Circuit With Leakage-Based PTAT Generation
| Autor: | Hong-June Park, Youngwoo Ji, Jae-Yoon Sim, Byungsub Kim |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Power supply rejection ratio
Materials science Bandgap voltage reference business.industry 020208 electrical & electronic engineering 020206 networking & telecommunications Line regulation 02 engineering and technology Temperature measurement CMOS Hardware and Architecture MOSFET 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business Software Voltage Leakage (electronics) |
| Zdroj: | IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26:2310-2321 |
| ISSN: | 1557-9999 1063-8210 |
| DOI: | 10.1109/tvlsi.2018.2852802 |
| Popis: | This paper presents detailed analyses on leakage-based bandgap reference (BGR) circuit for ultralow-power applications. Design considerations for power supply rejection ratio and noise characteristics are provided with pole/zero analysis. Startup settling issue is also discussed with measurements. For verification, a test BGR circuit is implemented in a 0.18- $\mu \text{m}$ CMOS technology. The standard deviation of proportional-to-absolute-temperature (PTAT) voltages measured from 20 chips is 1.15% at 30 °C. The BGR also uses two PTAT voltages to reduce the resistance for complementary-to-absolute-temperature generation, hence alleviating the tradeoff limitation between power consumption and area cost. With an active area of 0.056 mm2, the BGR consumes 19 nW at room temperature. Measurements from 20 chips show a standard deviation of 0.54% at 30 °C without any trimming, a temperature dependence of 143 ppm/°C and a line regulation of 2.4%/V. |
| Databáze: | OpenAIRE |
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