| Autor: |
Robert Bass, Martin C. Peckerar, K. W. Rhee, Christie R. K. Marrian |
| Rok vydání: |
2002 |
| Předmět: |
|
| DOI: |
10.1016/b978-012174231-7/50064-6 |
| Popis: |
Lithography is a process in which an image is formed on a surface and the underlying material is patterned. In particular nanolithography forms patterns whose critical dimensions is on the order of 1 nm. This chapter illustrates both the practical and theoretical underpinnings of e-beam nanolithography in nanostructure science and technology. It discusses the various subsystems and overall systems architecture of e-beam tools. The chapter provides an insight on the future architectures progress to achieve optimization in e-beam nanolithography area. The method for studying boundary-placement accuracy limits in e-beam lithography using the simplex algorithm is described in the chapter as well. This approach is significant for small database modeling of nanostructure patterns and it includes resist impact through the contrast factor. It is observed through the discussion of hierarchies that full-dose modulation approaches are not practical for the circuits of the future. The solution involves a fusion of techniques. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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