| Autor: |
Mitsuaki Hori, H. Kokura, K. Hashimoto, Manabu Kojima, Masataka Kase, Y. Tagawa, Y. Momiyama, Hiroshi Morioka, Toshihiro Sugii, Hiroyuki Ohta, S. Inagaki, Sergey Pidin, Toshihiko Mori, K. Goto, Naoyoshi Tamura |
| Rok vydání: |
2004 |
| Předmět: |
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| Zdroj: |
IEEE International Electron Devices Meeting 2003. |
| DOI: |
10.1109/iedm.2003.1269358 |
| Popis: |
Aggressively scaled 25 nm gate CMOSFETs for the 65 nm node are reported. We successfully improved the short channel effect while keeping a high drive current by using total process controls (SW, offset-spacer, extension, halo, mechanical stress, etc.). Both mobility in nMOS and NBTI in pMOS are improved by combination of low temperature annealing and oxynitride gate oxide with low nitrogen concentration. High drive currents of 840/1010 /spl mu/A//spl mu/m and CV/I values of 0.54/0.60 psec with 25/33 nm gate nMOSFETs were achieved at Vdd=1 V and Ioff=100 nA//spl mu/m. They are the best values among recent published papers. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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