Improved resistive switching characteristics of atomic layer deposited Al2O3/La2O3/Al2O3 multi-stacked films with Al+ implantation
| Autor: | Xing Wang, Hongxia Liu, Yongte Wang, Shulong Wang, Lu Zhao |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Ion Resistive random-access memory Atomic layer deposition Resistive switching 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Control sample business Layer (electronics) Implanted device |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 30:12577-12583 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-019-01618-0 |
| Popis: | Resistive random access memory (RRAM) devices were designed using Al2O3/La2O3/Al2O3 multi-stacked films grown by atomic layer deposition as functional layers. The impact of Al+ ions implantation on the resistive switching performances of the RRAM devices was investigated. Compared with the control sample without Al+ implantation, forming-free operation and larger ON/OFF resistance ratio were achieved in the Al+ implanted RRAM device. Besides, the resistive switching stability and electrical uniformity of the implanted device were enhanced. The enhanced performances of the Al+ implanted RRAM device were deduced by the improvement in the formation and disruption of conducting filaments in the Al2O3/La2O3/Al2O3 multi-stacked films. |
| Databáze: | OpenAIRE |
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