Magnetic field sensor based on compensated silicon

Autor:	O. É. Sattorov, K. S. Ayupov, M. K. Bakhadyrkhanov, Kh. M. Iliev
Rok vydání:	2003
Předmět:	inorganic chemicals Materials science Physics and Astronomy (miscellaneous) Silicon Condensed matter physics Magnetoresistance Doping technology industry and agriculture chemistry.chemical_element Manganese equipment and supplies Magnetic field Nuclear magnetic resonance chemistry human activities
Zdroj:	Technical Physics Letters. 29:705-707
ISSN:	1090-6533 1063-7850
Popis:	The phenomenon of negative magnetoresistance in compensated silicon doped with manganese has been studied. The possibility of using this effect in magnetic field sensors is assessed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::abcef1edc3433ed6387af94f615468d1 https://doi.org/10.1134/1.1615541 Zobrazit plný text záznamu Plný text ve formátu PDF