Long-lived excited impurity states in diamond-like semiconductors

Autor:	O. I. Smirnova, Ya. E. Pokrovskii, A. Khvalkovskii
Rok vydání:	1997
Předmět:	Materials science business.industry Photoconductivity General Physics and Astronomy Diamond chemistry.chemical_element Germanium engineering.material Semiconductor chemistry Impurity Excited state engineering Charge carrier Atomic physics Ionization energy business
Zdroj:	Journal of Experimental and Theoretical Physics. 85:121-129
ISSN:	1090-6509 1063-7761
DOI:	10.1134/1.558294
Popis:	The lifetime of charge carriers in the lowest excited states of some impurities of groups III and V in diamond, silicon, and germanium can be several (four to six) orders of magnitude longer that the lifetime of free carriers. Accumulation of carriers in these long-lived states may give rise to several new effects, such as hopping photoconductivity via long-lived excited states of impurities in dc and microwave electric fields, slow relaxation of induced absorption, and infrared absorption at energies lower than the impurity ionization energy.
Databáze:	OpenAIRE
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