Generation and transport of contamination in high current implanters

Autor:	M. Jones, N. Meyyappan, Blake Julian G, M. Sato, S. Hirokawa
Rok vydání:	1995
Předmět:	Nuclear and High Energy Physics Materials science Nuclear engineering chemistry.chemical_element Contamination Trim Ion implantation Beamline chemistry Aluminium Wafer High current Atomic physics Current (fluid) Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:56-61
ISSN:	0168-583X
DOI:	10.1016/0168-583x(94)00454-4
Popis:	Sources and pathways for aluminium contamination in a high current ion implanter are studied by a set of experiments. Changes to implanter disk and beamline, the international introduction of tracer contaminants, and TRIM models of sputtered atom distributions in angel and energy are used to draw conclusions about mechanisms transporting aluminium to the wafer surface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::abc70833811b1e9e44a224570d5fde60 https://doi.org/10.1016/0168-583x(94)00454-4 Zobrazit plný text záznamu Full Text from ScienceDirect