| Autor: |
Lan Zhong Hao, Wen Yue Guo, Lian Qing Yu, Wan Li Zhang, Jun Zhu, Yun Jie Liu |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
Key Engineering Materials. 655:186-190 |
| ISSN: |
1662-9795 |
| DOI: |
10.4028/www.scientific.net/kem.655.186 |
| Popis: |
(001)-oriented LiNbO3(LN) ferroelectric films were grown on (100)-oriented n-type Si substrates using 15 nm-thick ZnO layers as buffers by pulse laser deposition technique and the LN/ZnO/n-Si heterojunctions were fabricated. Obvious photoswitching characteristics to white light were observed when the reverse voltages were applied on the LN/ZnO/n-Si heterojunction. High performance was exhibited, such as a largeON/OFFratio, short photoresponse time, steadyONorOFFstates, and well reversible. The results were discussed in terms of the band diagrams of the LN/ZnO/Si heterojunctions in this work. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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