Interfacial mechanism studies of electroless plated Cu films on a-Ta:N layers catalyzed by PIII
| Autor: | Chien-Cheng Lin, Wei Jen Hsieh, Han C. Shih, Chwung Shan Kou, Tzu Li Lee, Jian Hong Lin |
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| Rok vydání: | 2002 |
| Předmět: |
Auger electron spectroscopy
Materials science Annealing (metallurgy) Metallurgy Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Copper Surfaces Coatings and Films Amorphous solid chemistry.chemical_compound chemistry Tantalum nitride Transmission electron microscopy X-ray crystallography High-resolution transmission electron microscopy |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:733-740 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.1465448 |
| Popis: | This study evaluated the interface reaction and crystallography of the electroless plated copper film (∼0.2 μm thick) catalyzed by plasma immersion ion implanted (PIII) Pd on the 150-A-thick amorphous tantalum nitride (a-Ta:N) barrier layer. The copper plated specimens were annealed at various temperatures in an ambient atmosphere of 90% nitrogen + 10% hydrogen mixed gases. Sheet resistivity, Auger electron spectroscopy (AES) analyses showed that the PIII Pd atoms were diffused into the copper layer from the interface of a-Ta:N and copper layers after 500 °C annealing for 1 h. Results based on x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) showed a phase transformation from a-Ta:N into crystallized Ta2N phase at annealing. The Cu(111) texture was strengthened at 300 °C annealing for 1 h because of the relaxation of the residual stress and recovery of the copper film. The texture was reduced at the 500 °C annealing for 1 h because of the copper grain growth. The adhesi... |
| Databáze: | OpenAIRE |
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