| Autor: |
R. Rao, J. Hubacek, R. Nowicki, W. Urbanek, G. Gammie, S. Skala, H. Busta, J.E. Pogemiller, D. Devine |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
Proceedings of International Electron Devices Meeting. |
| Popis: |
Individual and groups of 3/spl times/3 and 10/spl times/10 gated volcano-shaped field emitters have been processed with gate dimensions of 4, 8, 14, 25 and 50 /spl mu/m and gate-to-emitter rim distances of 1.0 and 0.25 /spl mu/m. The 0.25 /spl mu/m devices are fabricated with a stepped oxide process which does not increase the gate-to-emitter capacitance significantly. Turn-on voltages range from 80-90 V for the 0.25 /spl mu/m devices and are about 250 V for the 1.0 /spl mu/m devices. I-V characteristics will be presented as well as an integration scheme for the formation of matrix-addressable arrays for field emitter display (FED) applications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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