| Autor: |
S. Harouni, A. L. Bouchetout, R. Bacha, Y. El Kouari, N. Boulares, A. Chaieb |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
ICTON |
| DOI: |
10.1109/icton.2019.8840558 |
| Popis: |
ZnO oxide is a promising material for optoelectronics because of its wide and direct gap (E g = 3.37 eV at room temperature). Pure and doped zinc oxide powders of various grain sizes have been synthesized by vaporisation-condensation using a solar furnace. The initial powders contained from 0 to 5 Ga mol % and 1mol ZnO+2mol Ga .This dissertation is the study of the effect of ZnO doped with Ga nano phase.The Research done initially on pure Zinc oxide doped with Ga micro phase using a simple electric oven and nano phase by the Odeillo solar furnace. The problem of this study is mainly at the phase after the doping created called "Gallate phase" ZnGa 2 O 4 , where we notice the disappearance of this nano phase which proves the high temperature effect . Results show: The appearance of the spinel phase ZnGa 2 O 4 (Gallate), in the micro powders. The grain size of nanopowders increases as the Ga concentration increases for all considered compositions. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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