Three-dimensional silicon integration

Autor: A. M. Stephens, P.S. Andry, R. Horton, Sri M. Sri-Jayantha, Steven L. Wright, Katsuyuki Sakuma, Cornelia K. Tsang, Mario J. Interrante, John U. Knickerbocker, B. C. Webb, Edmund J. Sprogis, Chirag S. Patel, R. Sirdeshmukh, Anna W. Topol, B. Dang, Robert J. Polastre
Rok vydání: 2008
Předmět:
Zdroj: IBM Journal of Research and Development. 52:553-569
ISSN: 0018-8646
Popis: Three-dimensional (3D) silicon integration of active devices with through-silicon vias (TSVs), thinned silicon, and silicon-to-silicon fine-pitch interconnections offers many product benefits. Advantages of these emerging 3D silicon integration technologies can include the following: power efficiency, performance enhancements, significant product miniaturization, cost reduction, and modular design for improved time to market. IBM research activities are aimed at providing design rules, structures, and processes that make 3D technology manufacturable for chips used in actual products on the basis of data from test-vehicle (i.e., prototype) design, fabrication, and characterization demonstrations. Three-dimensional integration can be applied to a wide range of interconnection densities (
Databáze: OpenAIRE