| Popis: |
EUV lithography requirements continue to present new challenges and opportunities for multi-beam mask writer. Driven by sub-10nm node mask requirements for higher resolution, CD uniformity, pattern placement accuracy, lower line edge roughness (LER), and zero writer-induced defects, the multi-beam mask patterning technology must keep the pace, continue to innovate, and work hand-in-hand with mask makers to overcome these challenges to meet the mask and wafer manufacturing metrics and requirements. In this paper we will review some of these challenges from the mask maker point of view. Also, we will shed light on a bigger challenge of transitioning to curvilinear mask ILT (Inverse Lithography Technology) data structure and the support needed from multi-beam writer to handle large data volume. Processing and managing this large growth of data helps the mask industry speed up the process of adapting to this technology and enabling EUV mask and wafer manufacturing reach its ultimate goals. |
