A new self-aligned top-gate polysilicon TFT architecture for low temperature processing

Autor:	Jackson Ho, R.T. Fulks, J. B. Boyce
Rok vydání:	2002
Předmět:	Materials science Passivation Silicon business.industry Doping chemistry.chemical_element Laser Active matrix law.invention chemistry law Thin-film transistor Thermal Electronic engineering Optoelectronics Crystallization business
Zdroj:	58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).
DOI:	10.1109/drc.2000.877107
Popis:	Summary form only given. Laser crystallized polysilicon thin film transistors (TFTs) have been found attractive for active matrix addressing with integrated drivers on low temperature glass substrates and more recently on plastic substrates. The TFT process typically uses a top gate self-aligned architecture with a laser crystallization channel anneal and a thermal doping activation anneal. For very low temperature processing, two laser anneal steps are required (Carey et al, 1997). In this work, we have developed a new self-aligned TFT architecture that requires only a single laser process step to achieve simultaneous crystallization and doping. It also has the advantage of allowing an efficient hydrogen passivation step early in the process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ab68d0dfe9623f9f4ee400267a5c7c6e https://doi.org/10.1109/drc.2000.877107 Zobrazit plný text záznamu