| Autor: |
Vladimir K. Makukha, Valeriy G. Kesler, Viktor V. Atuchin |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
2010 IEEE 2nd Russia School and Seminar on Fundamental Problems of Micro/Nanosystems Technologis (MNST). |
| DOI: |
10.1109/mnst.2010.5687143 |
| Popis: |
• XPS method enables to analyze parameters of chemical bonds in complex dielectric oxides. • Difference of energies of photoelectric yield from 0 1s level and cation level is the most reproducible parameter. • Ranges of electronic parameters have been found for core levels of KTiOPO 4 crystals. • Relations of yield energy difference to mean chemical bond length L(M-O) are specific for different-type cations. • Electronic parameters of complex oxides can be predicted on the basis of their structural characteristics. • Diagrams ΔBE — L(M-O) can be applied to screening of invalid XPS measurements. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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