Graphene/h-BN heterostructures under pressure: From van der Waals to covalent
Autor: | Mario S. C. Mazzoni, Matheus J. S. Matos, Alan C. R. Souza, Tiago Campolina Barbosa, Helio Chacham, Bernardo R. A. Neves, Ana Paula M. Barboza, J. C. Brant |
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Rok vydání: | 2019 |
Předmět: |
Graphene
Heterojunction 02 engineering and technology General Chemistry Electronic structure 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Molecular electronic transition 0104 chemical sciences law.invention symbols.namesake Scanning probe microscopy Chemical physics law Ab initio quantum chemistry methods symbols Molecule General Materials Science van der Waals force 0210 nano-technology |
Zdroj: | Carbon. 155:108-113 |
ISSN: | 0008-6223 |
DOI: | 10.1016/j.carbon.2019.08.054 |
Popis: | Scanning probe microscopy and ab initio calculations reveal modifications on the electronic and structural properties of graphene/h-BN heterostructures induced by compression. Using AFM and EFM techniques, with charge injection being made in the heterostructures at different pressures, the charge injection efficiency monotonically decreases with increasing pressure for monolayer-graphene (MLG)+BN heterostructures, indicative of a conductor-insulator electronic transition. Bilayer-graphene (BLG)+BN and trilayer-graphene (TLG)+BN heterostructures show a non-monotonic behavior of charge injection versus pressure, indicative of competing electronic structure modifications. First-principle calculations of these systems indicate a pressure-induced van der Waals-to-covalent interlayer transition, where such interlayer covalent binding, in the presence of water molecules, results in a disordered insulating structure for the MLG + BN case, while it leads to an ordered conducting structure for both BLG + BN and TLG + BN heterostructures. These opposing effects may have a strong influence on graphene/h-BN-based electronic devices and their physics under pressurized environments. |
Databáze: | OpenAIRE |
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