Control and analysis of leakage currents in poly-Si thin-film transistors

Autor:	John R. A. Ayres, Michael J. Trainor, Stanley D. Brotherton
Rok vydání:	1996
Předmět:	Materials science Subthreshold conduction business.industry Transistor General Physics and Astronomy Thermal conduction law.invention Tunnel effect Thin-film transistor law Optoelectronics Thin film business Quantum tunnelling Leakage (electronics)
Zdroj:	Journal of Applied Physics. 79:895
ISSN:	0021-8979
DOI:	10.1063/1.360869
Popis:	Control of leakage current in autoregistered columnar and a solid phase crystallized poly‐Si thin‐film transistors(TFTs) is discussed. For n‐channel TFTs, two parasitic leakage current paths, due to bulk conduction and back interface conduction, have been identified. It is demonstrated that these can be controlled by using sufficiently thin films and by low dose boron back channel implants, respectively. By these means, generation limited leakage currents, with values of
Databáze:	OpenAIRE
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