| Autor: |
Phillip Czeslaw Jozwiak, K. Verhaege, B. Keppens, Cong Son Trinh, Cornelius Christian Russ, Markus Paul Josef Mergens, John Armer, Russell Mohn |
| Rok vydání: |
2004 |
| Předmět: |
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| Zdroj: |
IEEE International Electron Devices Meeting 2003. |
| DOI: |
10.1109/iedm.2003.1269334 |
| Popis: |
A novel diode-triggered SCR (DTSCR) ESD protection element is introduced for low-voltage application (signal, supply voltage /spl les/1.8 V) and extremely narrow ESD design margins. Trigger voltage engineering in conjunction with fast and efficient SCR voltage clamping is applied for the protection of ultra-sensitive circuit nodes, such as SiGe HBT bases (e.g. f/sub Tmax/=45 GHz in BiCMOS-0.35 /spl mu/m LNA input) and thin gate-oxides (e.g. tox=1.7 nm in CMOS-0.09 /spl mu/m input). SCR integration is possible based on CMOS devices or can alternatively be formed by high-speed SiGe HBTs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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