Design of a K-Band High-Efficiency Power Amplifier in 45 nm SOI CMOS Technology
| Autor: | Chen Liying, Wang Hao, Junfa Zhao, Zhang Simin |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Cmos power amplifier business.industry Soi cmos technology Amplifier Condensed Matter Physics Electronic Optical and Magnetic Materials CMOS Control and Systems Engineering K band Materials Chemistry Ceramics and Composites Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Integrated Ferroelectrics. 217:95-106 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/10584587.2021.1911300 |
| Popis: | This paper presents a high efficiency K-band CMOS power amplifier (PA) in GlobalFoundries (GF) 45 nm SOI CMOS technology for 5 G applications. Compared with an ordinary two-stage PA, the PA uses a ... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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