Efficiency-droop reduction in blue InGaN light-emitting diodes with low temperature p-type insertion layer

Autor:	Xin Chen, Han-Xiang Yi, Xingfu Wang, Dan-Wei Li, Zhiwei Ren, Xiang-Jing Zhuo, Bijun Zhao, Shuti Li, Jun Zhang, Jinhui Tong
Rok vydání:	2014
Předmět:	Materials science business.industry Superlattice Composite number Electron Condensed Matter Physics Polarization (waves) law.invention Active layer law Transition layer Optoelectronics General Materials Science Voltage droop Electrical and Electronic Engineering business Light-emitting diode
Zdroj:	Superlattices and Microstructures. 73:145-151
ISSN:	0749-6036
DOI:	10.1016/j.spmi.2014.05.017
Popis:	GaN based light emitting diodes with specially designed low temperature (LT) transition layers are investigated. Theoretical simulation shows that the LT-pGaN with LT-InGaN/GaN superlattice composite transition layer structure can effectively alleviate polarization field in the active layer and p-n junction region, consequently enhancing hole injection efficiency and electron blocking capability. Furthermore, the experimental results demonstrate that the low temperature (LT) transition layers can protect the active region from detrimental thermal annealing effect during high temperature p-GaN growth process. Finally, the reduced forward voltage and the enhanced output power about 42.2% were achieved at the injection current of 200 mA.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ab34c0d9f5e0bdd36d69f1ba5045990a https://doi.org/10.1016/j.spmi.2014.05.017 Zobrazit plný text záznamu Full Text from ScienceDirect