Analysis of stresses in Ru thin films prepared by chemical vapor deposition
| Autor: | Cheol Seong Hwang, Ha Jin Lim, Sang Yeol Kang, Hyeong Joon Kim |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Annealing (metallurgy) Analytical chemistry Surfaces and Interfaces Chemical vapor deposition Combustion chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films Stress (mechanics) Ultimate tensile strength Electrode Composite material Thin film Internal stress |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:1381-1385 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.1560713 |
| Popis: | Ru is the most promising material for the capacitor electrode in the next generation dynamic random access memories. Ru thin films, however, which are deposited by chemical vapor deposition (CVD) have high tensile stresses. Therefore, many problems with respect to device reliability such as peeling or thermal deformation have been reported. In this study, we investigated the effects of the various deposition parameters on the stress behaviors. Ru thin films were prepared by metal-organic CVD on (100) Si substrate using RuCp(i-PrCp) precursor and O2 reaction gas. Internal stress of Ru thin film was measured using the laser scanning method. As the Ru film grew, tensile stress increased. And the tensile stress also increased with reduction of substrate temperature. These tendencies are attributed to low atomic mobility of the Ru material (Tm=2523 K). In addition, tensile stress increased more than 300 MPa after the annealing process. It can be explained by densification through rearrangement of Ru atoms duri... |
| Databáze: | OpenAIRE |
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