Piezoelectric effect in (001)‐ and (111)‐oriented double‐barrier resonant tunneling devices

Autor:	John D. Albrecht, L. Cong, M. I. Nathan, P. Paul Ruden
Rok vydání:	1996
Předmět:	Tunnel effect Polarization density Materials science business.industry Perpendicular General Physics and Astronomy Optoelectronics Heterojunction Semiconductor device business Polarization (waves) Piezoelectricity Quantum tunnelling
Zdroj:	Journal of Applied Physics. 79:7770-7774
ISSN:	1089-7550 0021-8979
Popis:	We show experimentally that current–voltage characteristics of double‐barrier resonant tunneling devices (DBRTDs) can be modified by internal polarization fields due to the piezoelectric effect induced by external uniaxial stresses. Electric polarization fields, perpendicular to the interfaces, arise in DBRTDs grown on (001)‐oriented substrates under uniaxial, compressive stresses parallel to the (110) or (110) crystal orientations, and in DBRTDs grown on (111)B‐oriented substrates under stress parallel to (111) crystal orientation. The voltages at which the resonant tunneling current peaks occur (peak voltages) are sensitive to the polarization fields induced by external stresses. The peak voltages can shift to more positive voltages or more negative voltages depending on the directions of applied stresses. We measured current–voltage characteristics of AlAs/GaAs/AlAs double‐barrier resonant tunneling structures as a function of external stresses at 77 K. Uniaxial stress was applied parallel to the (110...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ab1f6245079b7e2419aa679c10776c1f https://doi.org/10.1063/1.362382 Zobrazit plný text záznamu