A simple silicon compatible 40nm electroplated copper T-gate process
| Autor: | Menglin Cao, Xu Li, Stephen Thoms, S. Ferguson, Iain G. Thayne, Douglas Macintyre |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element Nanotechnology Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Copper Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Nanoimprint lithography law.invention Footprint (electronics) chemistry law Hardware_INTEGRATEDCIRCUITS Copper plating Electrical and Electronic Engineering Stepper Electroplating Lithography |
| Zdroj: | Microelectronic Engineering. 121:153-155 |
| ISSN: | 0167-9317 |
| Popis: | This paper reports a simple route to fabricating T-gate like structures with footprint of 40nm using a copper electroplating process and a single electron beam lithography step without the need for lift-off. To our knowledge, these are the smallest such structures demonstrated using this approach which could also be implemented straightforwardly using conventional stepper or nanoimprint lithography for low cost, high volume silicon compatible manufacture. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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