Coplanar amorphous silicon thin film transistor fabricated by inductively-coupled plasma CVD
| Autor: | Se Il Cho, Young Jin Choi, Kyu Sik Cho, Jin Jang, S.M Pietruszko, Sung Ki Kim |
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| Rok vydání: | 1999 |
| Předmět: |
Amorphous silicon
Materials science Silicon Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Subthreshold slope Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Threshold voltage chemistry.chemical_compound chemistry Thin-film transistor Materials Chemistry Inductively coupled plasma |
| Zdroj: | Thin Solid Films. 337:200-202 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(98)01380-7 |
| Popis: | The electrical and optical properties of the a-Si:H films deposited by inductively-coupled plasma chemical vapour deposition (ICP-CVD) have been investigated. The ICP-CVD a-Si:H films deposited at 30 mTorr exhibited the deposition rate of 0.9 A/s and the hydrogen content of 17 at.%. A novel coplanar self-aligned a-Si:H thin film transistor has been fabricated using Ni-silicide gate and source/drain contacts. The coplanar a-Si:H TFT exhibited a field effect mobility of 0.6 cm 2 /Vs, a threshold voltage of 2.3 V, a subthreshold slope of 0.5 V/dec. |
| Databáze: | OpenAIRE |
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