Autor: Josef Mysliveček, Pavel Kocán, T. Jarolímek, Pavel Sobotík, I. Ošťádal
Rok vydání: 2003
Předmět:
Zdroj: Czechoslovak Journal of Physics. 53:69-74
ISSN: 0011-4626
DOI: 10.1023/a:1022359705138
Popis: Surface diffusion is one of the basic processes determining morphology of a growing film. In the case of metal heteroepitaxy on Si(111)-(7X7) the diffusion is strongly affected by the presence of surface reconstruction, which introduces additional constraints into the motion of deposited atoms. To determine diffusion parameters we used two different approaches: i) interpretation of experimentally observed morphologies by a coarse-grained kinetic Monte Carlo model, ii) direct observation of adatom movement using UHV STM. The attempt frequency and the barrier to hopping of a single Ag atom between half-unit cells of the reconstruction were estimated in both cases. Obtained values are compared and discussed.
Databáze: OpenAIRE