RF-MEMS Tuned GaN HEMT based Cavity Oscillator for X-band
| Autor: | Herbert Zirath, Thomas Emanuelsson, Per Ligander, Mikael Horberg, Szhau Lai, Dan Kuylenstierna |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering X band Electrical engineering dBc 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor Variable-frequency oscillator Condensed Matter Physics Vackář oscillator Phase noise 0202 electrical engineering electronic engineering information engineering Optoelectronics Radio frequency Electrical and Electronic Engineering business Monolithic microwave integrated circuit |
| Zdroj: | IEEE Microwave and Wireless Components Letters. 27:46-48 |
| ISSN: | 1558-1764 1531-1309 |
| DOI: | 10.1109/lmwc.2016.2629973 |
| Popis: | This letter presents a radio frequency micro-electromechanical systems (RF-MEMS) tuned cavity oscillator for X-band. The active part of the oscillator is implemented in GaN-HEMT MMIC technology. The RF-MEMS-switches are realized on a quartz substrate that is surface mounted on a low loss PCB. The PCB is intruded in an aluminum cavity acting as an electrically moveable wall. For a three-row RF-MEMS setup, a tuning range of 5 % around an oscillation frequency of 10 GHz is demonstrated in measurements. The phase noise is as low as −140 dBc/Hz to −129 dBc/Hz at 100 kHz from the carrier, depending on the configuration of the RF-MEMS. |
| Databáze: | OpenAIRE |
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