Growth of Cu thin films by the successive ionic layer adsorption and reaction (SILAR) method
| Autor: | Seppo Lindroos, T. Ruuskanen, Markku Leskelä, Mikko Ritala |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
010302 applied physics
Inorganic chemistry Metals and Alloys chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces Island growth 021001 nanoscience & nanotechnology 01 natural sciences Copper Surfaces Coatings and Films Electronic Optical and Magnetic Materials Indium tin oxide Adsorption chemistry Molybdenum Basic solution 0103 physical sciences Materials Chemistry Thin film 0210 nano-technology Layer (electronics) |
| Zdroj: | Thin Solid Films. 460:36-40 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2004.01.065 |
| Popis: | Copper thin films were grown on reduced indium tin oxide, molybdenum and polymer substrates using successive ionic layer adsorption and reaction (SILAR) method. Copper films were grown sequentially in a controlled way using simple copper salt and basic solution of formaldehyde as precursors. The copper films were polycrystalline with no preferred orientation as characterised by X-ray diffraction. On all substrates, the growth was clearly island growth in the beginning but after the whole surface was covered, the growth was more homogeneous. |
| Databáze: | OpenAIRE |
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