| Autor: |
Moïse Sotto, Asahi Degawa, Yasuhiko Ishikawa |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
Nanophotonics and Micro/Nano Optics VI. |
| DOI: |
10.1117/12.2575522 |
| Popis: |
Ge epitaxial layer is grown on a bonded Si-on-quartz (SOQ) wafer by ultrahigh vacuum chemical vapor deposition. A tensile strain as large as 0.4% is generated in Ge grown on SOQ, which is almost two times larger than ~0.2% in Ge grown on an ordinary Si-on-insulator (SOI) wafer. The enhancement of tensile strain is derived from an increased thermal expansion mismatch between the Ge layer and the base substrate of quartz in SOQ, whose thermal expansion coefficient of 0.5 × 10-6 K-1 is smaller than 2.6 × 10-6 K-1 for Si base substrate in SOI. Because of the strain-induced bandgap narrowing, the direct bandgap energy is reduced from ~0.77 eV for Ge on SOI to ~0.75 eV for Ge on SOQ. Performances are discussed when the strain-enhanced Ge layer on SOQ is applied to near-infrared photonic devices of photodetectors and light emitters. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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