Overlapping electron traps inn‐type silicon studied by capacitance transient spectroscopy

Autor:	K.-H. Rydén, B. M. S. Lewerentz, B. G. Svensson
Rok vydání:	1989
Předmět:	Silicon Annealing (metallurgy) Chemistry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Electron Capacitance Molecular physics law.invention Impurity law Electron beam processing Irradiation Electron paramagnetic resonance
Zdroj:	Journal of Applied Physics. 66:1699-1704
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.344389
Popis:	In n‐type Czochralski‐grown silicon samples, a broad unidentified level is observed ∼0.32 eV below the conduction band after high‐energy electron irradiation. This level has been investigated in detail using deep‐level transient spectroscopy and capacitance‐versus‐time measurements. The broad level consists of two overlapping but independent peaks which are clearly resolved. The generation rate of these peaks, as a function of bombardment dose and as a function of sample depth, as well as their annealing kinetics has been investigated. The identities of the overlapping peaks are discussed, and our findings are compared with optical and electron paramagnetic resonance (EPR) measurements performed by other authors. In particular, the importance of performing depth profiling when identifying unknown peaks is emphasized. One level is tentatively assigned to a gold‐related complex, while the other shows several similarities with the EPR G15 center.
Databáze:	OpenAIRE
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