First demonstration of flexible poly-Si nano-FETs (W/Lg= 50/80 nm) on the polyimide utilizing multi-wavelength laser annealing assisted by laser-buffer layer

Autor: Po-Cheng Hou, Wen-Hsien Huang, Ming-Hsuan Kao, Shih-Wei Chen, Hsing-Hsiang Wang, Chang-Hong Shen, Jia-Min Shieh, Fu-Ming Pan, Li Chang
Rok vydání: 2022
Zdroj: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
DOI: 10.1109/edtm53872.2022.9797921
Databáze: OpenAIRE