Autor: |
R.B. van Dover, M.-Y. Ho, B. Brijs, Glen D. Wilk, Eric Garfunkel, B.W. Busch, J. M. Hergenrother, P. Kalavade, A. Kornblit, Steven James Hillenius, D. Monroe, F. Klemens, Martin L. Green, T. Gustafsson, T.W. Sorsch |
Rok vydání: |
2003 |
Předmět: |
|
Zdroj: |
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303). |
Popis: |
We demonstrate for the first time that chemical oxide underlayers /spl sim/5 /spl Aring/ thick provide improved growth and flatband voltage control of ALD HfO/sub 2/ films compared to thermal oxides. Optimized annealing conditions are shown to greatly reduce both fixed charge and interfacial oxide growth in the high-/spl kappa/ stacks. Extremely small flatband voltage shifts of |
Databáze: |
OpenAIRE |
Externí odkaz: |
|