Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing

Autor:	R.B. van Dover, M.-Y. Ho, B. Brijs, Glen D. Wilk, Eric Garfunkel, B.W. Busch, J. M. Hergenrother, P. Kalavade, A. Kornblit, Steven James Hillenius, D. Monroe, F. Klemens, Martin L. Green, T. Gustafsson, T.W. Sorsch
Rok vydání:	2003
Předmět:	Post annealing chemistry.chemical_compound Materials science chemistry Fixed charge Annealing (metallurgy) Interfacial oxide Oxide Electronic engineering Analytical chemistry Flat band Dielectric thin films Hafnium compounds
Zdroj:	2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
Popis:	We demonstrate for the first time that chemical oxide underlayers /spl sim/5 /spl Aring/ thick provide improved growth and flatband voltage control of ALD HfO/sub 2/ films compared to thermal oxides. Optimized annealing conditions are shown to greatly reduce both fixed charge and interfacial oxide growth in the high-/spl kappa/ stacks. Extremely small flatband voltage shifts of
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aaaae1a80e1dde41e59a0bf3ee631d32 https://doi.org/10.1109/vlsit.2002.1015401 Zobrazit plný text záznamu