A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation

Autor: Yil Suk Yang, Kyoung Il Na, Jong Dae Kim, Jin Gun Koo, Dong Ha Kah, Hoon Soo Park, Jin Ho Lee, Sang Gi Kim
Rok vydání: 2012
Předmět:
Zdroj: Journal of the Korean Physical Society. 60:1552-1556
ISSN: 1976-8524
0374-4884
DOI: 10.3938/jkps.60.1552
Popis: Gate dielectrics in trench structures for trench gate metal oxide semiconductor field-effect transistor (MOSFET) power devices are very important to realize excellent characteristics. In this paper we describe multiple-layer gate dielectrics for trench gate MOSFETs with both thermal and chemical vapor deposition (CVD) gate oxides that exhibit excellent gate oxide properties and surface roughness. Through various trench etching experiments for better surface conditions in the trench, the optimum etching gas chemistry and etch conditions were found. The destruction of gate dielectric in trench gate MOSFET occurs at the top and the bottom trench corner edges. The structure of the gate electrode is pulled out with the polysilicon layer which is buried in the trench. Thus, high electric field operation is inevitable at the gate between source diffusion and the gate polysilicon. Moreover, the trench corner oxide suffers from the high electric field. We propose a multiple-gate dielectric structure of a thermal oxide and CVD oxide for highly reliable operation of the device. This enables trench surface smoothing and low thermal stress at the trench corners and provides the oxide thickness uniformity, giving superior device characteristics of high breakdown voltage and low leakage current. These improvements are caused by the excellent quality of the gate oxide and the good thickness uniformity that is formed at the inner trench with a specific geometrical factor.
Databáze: OpenAIRE
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