| Popis: |
Solution processed Zn-Sn-O (ZTO) is an attractive amorphous oxide semiconductor (AOS) because solution processing does not require vacuum equipment enabling inexpensive large-area applications and ZTO has a higher mobility compared to amorphous silicon (a-Si) [1]. With a bandgap of ∼3eV, similar to that of GaN and SiC, amorphous oxide semiconductors may enable a new generation of thin film power devices, i.e. high voltage TFTs (HVTFTs) and rectifiers. Recent work has demonstrated HVTFTs supporting voltages of 80 to 100 V using vacuum deposited ZnO and IGZO with source and/or drain offsets [2]-[4]. In this work, we report the first solution processed ZTO HVTFTs able to support > 100 V by incorporation of a drain offset, and assess the impact of the drain offset on the device on-resistance. |
