Strain-balanced heterostructures with up to 50 QWs by MBE

Autor:	W. Schlapp, R. Lösch, Hartmut Hillmer
Rok vydání:	1997
Předmět:	Diffraction Photoluminescence business.industry Chemistry Heterojunction Condensed Matter Physics Epitaxy Inorganic Chemistry Optics Materials Chemistry Optoelectronics Wafer business Ternary operation Quantum well Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. :1120-1125
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(96)00825-1
Popis:	Using solid-source MBE, strain-balanced quaternary AlGaInAs/AlGaInAs multiple quantum well (MQW) strucures have been grown and studied by photoluminescence (PL) and X-ray diffraction (XRD) measurements, showing high epitaxial quality and excellent homogeneity in growth direction. The PL linewidths are low and almost independent of the number of QWs (1 ≤ N QW ≤ 50). With respect to photonic device applications at 1.55 μm, structures with quaternary QWs seem to be superior compared to structures with ternary QWs: structures with quaternary QWs enable more degrees of freedom in device design and reveal a five times larger lateral wafer area in which the PL wavelength is constant.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aaa1a4411fa995fd50b97674c01d4be6 https://doi.org/10.1016/s0022-0248(96)00825-1 Zobrazit plný text záznamu Full Text from ScienceDirect