Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology

Autor:	Injo Ok, Tenko Yamashita, Su Chen Fan, Vijay Narayanan, Takashi Ando, Shahrukh A. Khan, Huiming Bu, Patrick W. DeHaven, Rajesh Sathiyanarayanan, Rajan K. Pandey, Anita Madan, Q. Yuan, A. Dasgupta, M. Chace
Rok vydání:	2015
Předmět:	Metal Materials science business.industry visual_art MOSFET Electronic engineering visual_art.visual_art_medium Optoelectronics business Hafnium compounds Metal gate High-κ dielectric
Zdroj:	2015 IEEE International Electron Devices Meeting (IEDM).
DOI:	10.1109/iedm.2015.7409747
Popis:	We identified unique device width and length dependencies of Vt for FinFET Replacement Metal Gate (RMG). Choice of fill metal is important to obtain a flat Vt-Wdes trend. We proposed a new model for Vt-Lg roll-up for High-k last RMG and demonstrated a flat Vt-Lg trend via optimization of High-k and MOL films based on the understanding.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aa9ebd55574294d40aba2f80054590c1 https://doi.org/10.1109/iedm.2015.7409747 Zobrazit plný text záznamu