Ab initio description of the thermoelectric properties of heterostructures in the diffusive limit of transport
| Autor: | Florian Rittweger, Martin Hölzer, Peter Zahn, Ingrid Mertig, Arthur Ernst, N. F. Hinsche |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Phonon Superlattice Ab initio 02 engineering and technology Electron 01 natural sciences Condensed Matter::Materials Science Condensed Matter::Superconductivity 0103 physical sciences Thermoelectric effect Materials Chemistry Electrical and Electronic Engineering 010306 general physics Condensed matter physics Heterojunction Surfaces and Interfaces Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics Thermoelectric materials Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Strongly Correlated Electrons Charge carrier 0210 nano-technology |
| Zdroj: | physica status solidi (a). 213:672-683 |
| ISSN: | 1862-6300 |
| Popis: | authoren The scope of this review is to present the recent progress in the understanding of the microscopic origin of thermoelectric transport in semiconducting heterostructures and to identify and elucidate mechanisms which could lead to enhanced thermoelectric conversion efficiency. Based on first-principles calculations a consistent and convenient method is presented to fully describe the thermoelectric properties in the diffusive limit of transport for bulk systems and their associated heterostructures. While fundamentals of the functionality of phonon-blocking and electron-transmitting superlattices could be unveiled, we provide also distinct analysis and ideas for thermoelectric enhancement for two archetypical thermoelectric heterostructures based on and Si/Ge. A focus was on the influence of bulk and interfacial strain, varying charge carrier concentration, temperature, and superlattice periods on the thermoelectric transport properties. Transmission electron micrograph of a 10 A/50 A superlattice. Red and green areas highlight the layered structure. For optimal cross-plane transport () phonons (p) are expected to be scattered at the interfaces, while electrons (e−) transmit without losses. |
| Databáze: | OpenAIRE |
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