Hydrogenation‐defined stripe‐geometry In0.5(AlxGa1−x)0.5P quantum‐well lasers

Autor:	N. El-Zein, C. P. Kuo, Robert M Fletcher, T. D. Osentowski, M. G. Craford, John Dallesasse, Nick Holonyak
Rok vydání:	1990
Předmět:	Materials science Passivation business.industry Thermal resistance Inorganic chemistry General Physics and Astronomy Heterojunction Semiconductor device Laser Semiconductor laser theory law.invention law Optoelectronics business Quantum well Diode
Zdroj:	Journal of Applied Physics. 68:5871-5873
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.346962
Popis:	Data are presented on the continuous‐wave (cw), room‐temperature (300 K) operation of stripe‐geometry In0.5(AlxGa1−x)0.5P quantum‐well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current‐blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide‐stripe diodes fabricated on the same material.
Databáze:	OpenAIRE
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