Towards understanding the origin of the hysteresis effects and threshold voltage shift in organic field-effect transistors based on the electrochemically grown AlOx dielectric
| Autor: | Seif O. Cholakh, Nadezhda N. Dremova, Ivan S. Zhidkov, Ernst Z. Kurmaev, Pavel A. Troshin, Lidiya I. Leshanskaya, Sergey Yu. Luchkin, Keith J. Stevenson |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Metals and Alloys 02 engineering and technology Surfaces and Interfaces Semiconductor device Electrolyte Dielectric 010402 general chemistry 021001 nanoscience & nanotechnology Electrochemistry 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Threshold voltage Hysteresis Chemical engineering Materials Chemistry Field-effect transistor Thin film 0210 nano-technology |
| Zdroj: | Thin Solid Films. 649:7-11 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2018.01.014 |
| Popis: | We show that the electrochemically grown aluminum oxide dielectric films always comprise some redox-active molecular species absorbed from the electrolyte. This contamination affects dramatically electrical performance of organic field-effect transistors (OFETs), particularly leading to the appearance of hysteresis in the current-voltage characteristics and positive shift of the threshold voltage. A strong suppression of the hysteresis was observed while reducing the concentration of the citric acid or replacing it with an alternative electrolyte based on the aminoacid (isoleucine) and its potassium salt. |
| Databáze: | OpenAIRE |
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