GaN-Based Resonant-Cavity LEDs Featuring a Si-Diffusion-Defined Current Blocking Layer
| Autor: | Ching-Chin Huang, Jia-Huan Lin, Pinghui S. Yeh, Meng-Chun Yu, Jia-Rong Fan, Hao-Chung Kuo, Da-Wei Lin, Yen-Chao Liao |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Fabrication business.industry Aperture Gallium nitride Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Vertical-cavity surface-emitting laser chemistry.chemical_compound Wavelength Optics chemistry law Optoelectronics Electrical and Electronic Engineering Diffusion (business) business Diode Light-emitting diode |
| Zdroj: | IEEE Photonics Technology Letters. 26:2488-2491 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2014.2362297 |
| Popis: | GaN-based resonant-cavity light-emitting diode (RCLED) featuring a Si-diffusion-defined confinement structure is reported for the first time. The charge-coupled device images exhibited round, bright spots of sizes corresponding to the diffusion-defined aperture sizes under continuous-wave high-current-density operation and at room temperature. The full widths at half maximum of the electroluminescence spectra were 2 and 1.5 nm for 10- and 5- $\mu $ m-diameter RCLEDs, respectively. A stable peak wavelength of 406.6 nm was maintained at various injection currents. The results suggest Si diffusion is an effective means to reduce aperture size. The design and fabrication of the devices are described. |
| Databáze: | OpenAIRE |
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