Submicron enhancement-mode AlGaN/GaN HEMTs

Autor:	C. Ngo, Ming Hu, D. Wong, Peter W. Deelman, L.G. McCray, Tahir Hussain, Miroslav Micovic, M. Antcliffe, Paul Hashimoto, Jeong-Sun Moon
Rok vydání:	2003
Předmět:	Materials science Dynamic range business.industry Wide-bandgap semiconductor Schottky diode Algan gan Gallium nitride High-electron-mobility transistor Threshold voltage chemistry.chemical_compound chemistry Optoelectronics Radio frequency business
Zdroj:	60th DRC. Conference Digest Device Research Conference.
DOI:	10.1109/drc.2002.1029488
Popis:	Most recent GaN-based HEMT technology has been focused toward microwave power applications. In this work, we report DC and RF characteristics of the first E-mode AlGaN/GaN HEMTs fabricated down to 0.2 /spl mu/m gatelength, and having an f/sub t/ reaching 25 GHz. Further improvement of E-mode GaN HEMTs could open potential applications for mixed-signal ICs with a high dynamic range.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aa83a56e7b7cbe970e06565da9b2e295 https://doi.org/10.1109/drc.2002.1029488 Zobrazit plný text záznamu