Deposition of Conductive Ru and RuO2 Thin Films Employing a Pyrazolate Complex [Ru(CO)3(3,5-(CF3)2-pz)]2 as the CVD Source Reagent
Autor: | Reui-San Chen, Wei-Li Ching, Ying-Sheng Huang, Yun Chi, Yao-Lun Chen, Arthur J. Carty, Chao-Shiuan Liu, Yi-Hwa Song, Ji-Jung Kai |
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Rok vydání: | 2003 |
Předmět: | |
Zdroj: | Chemical Vapor Deposition. 9:162-169 |
ISSN: | 1521-3862 0948-1907 |
DOI: | 10.1002/cvde.200306242 |
Popis: | The reaction of Ru 3 (CO) 12 with three equivalent of 3,5-bis(trifluoromethyl)pyrazole [(3,5-(CF 3 ) 2 -Pz)H] at 180 °C produces the double pyrazolate-bridged ruthenium complex [Ru(CO) 3 (3,5-(CF 3 ) 2 -Pz)] 2 , (1), in high yield. This ruthenium complex has been characterized by spectroscopic methods, revealing a molecular structure similar to that of the diosmium analogue [Os(CO) 3 (3,5-(CF 3 ) 2 -pz)] 2 . Thermogravimetric analysis (TGA) of complex 1 showed an enhanced volatility compared to the parent carbonyl compound Ru 3 (CO) 12 and the closely related, unsaturated 3,5-di-tert-butyl pyrazole complex (2) [Ru 2 (CO) 5 (3,5-t-Bu 2 -Pz) 2 ]. Using complex 1 as the CVD source reagent, ruthenium metal with a preferred (002) orientation can be deposited at 400°C using H 2 as the carrier gas. If, however, O 2 is used as the carrier gas, RuO 2 thin films with a (101) orientation are obtained. The as-deposited metal thin films were characterized by various surface techniques, as well as by electrical resistivity measurements. |
Databáze: | OpenAIRE |
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