ChemInform Abstract: Surface and Interface Roughness of Ultrathin Nitric Oxide Oxynitride Gate Dielectric

Autor:	Rama I. Hegde, Kimberly G. Reid, Bikas Maiti, Raj Rai, Phil Tobin
Rok vydání:	2010
Předmět:	Surface (mathematics) Silicon business.industry Atomic force microscopy Gate dielectric chemistry.chemical_element General Medicine Surface finish Nitric oxide chemistry.chemical_compound chemistry Transmission electron microscopy Optoelectronics business Interfacial roughness
Zdroj:	ChemInform. 29
ISSN:	1522-2667 0931-7597
Popis:	Surface and interface roughness of 40-A oxynitride films grown on preoxidized (100) silicon surfaces in a nitric oxide (NO) ambient at 800°C have been investigated using atomic force microscopy with power spectral density, and cross-sectional transmission electron microscopy measurements. The results showed that the NO oxynitride surface is smoother and has less interfacial roughness compared to the thermal oxide (without NO anneal). These results are important given the current technological interest in oxynitrides for ultrathin gate dielectric applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aa769abc2ebc3015a182e5f0ec7cd50e https://doi.org/10.1002/chin.199815268 Zobrazit plný text záznamu Plný text