Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors
| Autor: | Seong Keun Kim, Jeong Hwan Han, Cheol Seong Hwang, Woojin Jeon, Woongkyu Lee, Yeon Woo Yoo, Changhee Ko, Clement Lansalot-Matras, Sang Woon Lee |
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| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | Chemistry of Materials. 25:953-961 |
| ISSN: | 1520-5002 0897-4756 |
| Popis: | The characteristics of the atomic layer deposition (ALD) of SrTiO3 (STO) films were examined for metal–insulator–metal capacitors, with Cp-based precursors Sr(iPr3Cp)2 and Cp*Ti(OMe)3 [Cp* = C5(CH3)5] employed as the Sr and Ti precursors, respectively. While the Sr precursor has a higher reactivity toward oxygen on the Ru substrate compared with another Ti precursor, with a 2,2,6,6-tetramethyl-3,5-heptanedionato ligand, which results in the highly Sr excessive STO film, the enhanced reactivity of the present Ti precursor suppressed the unwanted excessive incorporation of Sr into the film. A possible mechanism for the Sr overgrowth and retardation is suggested in detail. By controlling the subcycle ratio of SrO and TiO2 layers, stoichiometric STO could be obtained, even without employing a deleterious reaction barrier layer. This improved the attainable minimum equivalent oxide thickness of the Pt/STO/RuO2 capacitor to 0.43 nm, with acceptable leakage current density (∼8 × 10–8 A/cm2). This indicates an im... |
| Databáze: | OpenAIRE |
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