Silicon Nitride from Microwave Plasma: Fabrication and Characterization

Autor:	Jolanta E. Klemberg-Sapieha, Michael R. Wertheimer, S. Poulin-Dandurand, Yves Tessier
Rok vydání:	1986
Předmět:	Elastic recoil detection chemistry.chemical_compound Fabrication Materials science Silicon nitride chemistry Hybrid silicon laser Analytical chemistry Substrate (electronics) Plasma Refractive index Ion source
Zdroj:	MRS Proceedings. 68
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-68-183
Popis:	Plasma silicon nitride (P-SiN) films were prepared from SiH4/NH3 mixtures in a large volume microwave plasma (LMP) apparatus, at substrate temperatures T2 ranging from ambient to 250°C.Under otherwise nominally identical fabrication conditions, deposition rates were 10 to 25 times greater than those reported by others for radio- or audio-frequency plasmas.Based on film compositions, determined by elastic recoil detection (ERD), and measurements of such properties as density, refractive index, etch rate in dilute HF, and moisture permeation coefficient, our best P-SiN films (produced at T2 ≥ 200°C) are very similar to those reported in the literature.
Databáze:	OpenAIRE
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