Influence of sulfide treatment of profiled-interface Au-GaAs Schottky diodes on the polariton peak of the photoresponse

Autor:	O. B. Yastrubchak, Sergii Mamykin, O. I. Maeva, M. L. Dmitruk
Rok vydání:	1997
Předmět:	chemistry.chemical_classification Materials science Physics and Astronomy (miscellaneous) Sulfide business.industry Schottky barrier Photodetector Schottky diode Metal–semiconductor junction Semiconductor Photosensitivity chemistry Polariton Optoelectronics business
Zdroj:	Technical Physics Letters. 23:355-357
ISSN:	1090-6533 1063-7850
Popis:	We discuss the feasibility of controlling the photosensitivity of metal/thin intrinsic-oxide/semiconductor surface-barrier structures under conditions of excitation of surface polaritons. These structures may be used as polarization-sensitive photodetectors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aa4e135af63f533a4cc38c7d4a030785 https://doi.org/10.1134/1.1261888 Zobrazit plný text záznamu Plný text ve formátu PDF