35nm InP HEMT LNAs at E/W-Band Frequencies
| Autor: | Lani Bui, James Schellenberg, Nicholas Estella, Edmar Camargo |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Engineering
business.industry Broad bandwidth Amplifier 020208 electrical & electronic engineering Electrical engineering 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor Noise figure Low noise chemistry.chemical_compound chemistry W band 0202 electrical engineering electronic engineering information engineering Indium phosphide business |
| Zdroj: | 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). |
| DOI: | 10.1109/csics.2016.7751007 |
| Popis: | This paper presents the design and performance of two millimeter-wave LNAs using 35nm InP HEMT device technology. First, a single-ended 3-stage LNA, operating over the 81-86 GHz band, is reported with a noise figure (NF) of 1.6-1.9 dB and a gain of 28 ±1 dB. This is the lowest reported noise figure for LNAs at this frequency. Secondly, a balanced LNA, operating over the 56- 110 GHz band, is reported with a NF of typically 2.7 dB and a gain of greater than 20 dB. This amplifier represents an unprecedented combination of low noise, good input/output match, and broad bandwidth. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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