Photoemission from gallium nitride
Autor: | A. V. Pashuk, I. N. Surikov, E. G. Vil’kin, A. S. Petrov, M. R. Ainbund |
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Rok vydání: | 2004 |
Předmět: | |
Zdroj: | Technical Physics Letters. 30:451-451 |
ISSN: | 1090-6533 1063-7850 |
DOI: | 10.1134/1.1773331 |
Popis: | We have studied the possibility of obtaining a high-response photocathode based on Mg-doped p-GaN layers grown by metalorganic vapor phase epitaxy. |
Databáze: | OpenAIRE |
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