Photoemission from gallium nitride

Autor: A. V. Pashuk, I. N. Surikov, E. G. Vil’kin, A. S. Petrov, M. R. Ainbund
Rok vydání: 2004
Předmět:
Zdroj: Technical Physics Letters. 30:451-451
ISSN: 1090-6533
1063-7850
DOI: 10.1134/1.1773331
Popis: We have studied the possibility of obtaining a high-response photocathode based on Mg-doped p-GaN layers grown by metalorganic vapor phase epitaxy.
Databáze: OpenAIRE