| Autor: |
Yu-Zhi Li, Guangmiao Wan, Xinnan Lin, Shan Li, Ze-Ke Zheng, Shi-Min Ge |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
2020 IEEE 3rd International Conference on Electronics Technology (ICET). |
| DOI: |
10.1109/icet49382.2020.9119637 |
| Popis: |
In order to solve the issue of poor gate signal transmission in display panels based on InGaZnO thin film transistors, the panels were disassembled and analyzed. The poor transmissions of the gate signal results from the drain current drop phenomenon of some thin film transistors in gate circuits. When the collision ionization effect occurs in the high-resistance region near a drain electrode, the phenomenon could be observed. On one hand, the rate of electron capturing is higher than that of hole capturing, therefore the current of the thin film transistor decreases and the threshold voltage drifts forward. On the other hand, the broken Zn-O bonds caused by hot carriers forming electron trap sites degrade the electron transport. Some measures are implemented to solve the issue of drain current drop. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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